A comprehensive transport model for the electron mobility in AlxGa1−xN lattices-matched to GaN

A comprehensive model for the electron mobility in AlGaN lattices-matched to GaN is developed. A large number of experimental and theoretical mobility data and the results of Monte Carlo transport simulations in previous literature have been evaluated and referred as the basis for the model development. The proposed model describes the variation of the field-dependent mobility with carrier concentration, temperature, Al composition, random alloy, etc., showing good agreements with previous results. More emphases have been put on the effects of the temperature and random alloy in this work.