DocumentCode
1632743
Title
MEMS resonators that are robust to process-induced feature width variations
Author
Liu, Rong ; Paden, Brad ; Turner, Kimberly
Author_Institution
California Univ., Santa Barbara, CA, USA
fYear
2001
fDate
6/23/1905 12:00:00 AM
Firstpage
556
Lastpage
563
Abstract
In this paper, a frequency stability analysis and design method for MEMS resonators is presented. The frequency characteristics of a laterally vibrating resonator are analyzed. With the fabrication error on the sidewall of the structure being considered, the first and second order frequency sensitivities to the fabrication error are derived. A simple relationship between the proof mass area and perimeter, and the beam width, is developed for single material structures, which expresses that the proof mass perimeter times the beam width should equal six times the area of the proof mass. Design examples are given for the single material and multi-layer structures. The results and principles presented in the paper can be used to analyze and design other MEMS resonators
Keywords
errors; frequency stability; mass; micromechanical resonators; sensitivity analysis; silicon; MEMS resonators; Si; beam width; design method; first order frequency sensitivity; folded-beam suspended resonator; frequency characteristics; frequency stability analysis; laterally vibrating resonator; multi-layer structures; perimeter; process-induced feature width variations; proof mass area; robust design; second order frequency sensitivity; sidewall fabrication error; single material structures; Design methodology; Fabrication; Fluctuations; Gyroscopes; Microelectromechanical devices; Micromachining; Micromechanical devices; Resonant frequency; Robustness; Stability analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Frequency Control Symposium and PDA Exhibition, 2001. Proceedings of the 2001 IEEE International
Conference_Location
Seattle, WA
ISSN
1075-6787
Print_ISBN
0-7803-7028-7
Type
conf
DOI
10.1109/FREQ.2001.956339
Filename
956339
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