Title :
New dual-direction ESD device in Si-Ge BiCMOS process
Author :
Vashchenko, V.A. ; Hopper, P.J.
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
Abstract :
Conventional solutions for dual-direction ESD protection have drawbacks in layout area (stacked unidirectional ESD clamps) and in process technology scaling (SCR-based solutions). To provide scalable protection, a new device architecture, based on a novel merged-collector dual-direction BJT-based ESD clamp, is proposed and successfully implemented in a 0.13 μm BiCMOS process.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; bipolar transistors; electrostatic discharge; BiCMOS process; SCR-based solutions; Si-Ge; dual-direction ESD protection; merged-collector dual-direction BJT-based ESD clamp; process technology scaling; size 0.13 mum; stacked unidirectional ESD clamps; BiCMOS integrated circuits; Clamps; Electrostatic discharge; Fingers; Junctions; Thyristors; Voltage control;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667487
