The research of piezoresistive effect in different temperature based on AlGaN/GaN HEFT-micro-accelerometer

Author

Tang, Jianjun ; Liang, Ting ; Zhang, Qianqian ; Wang, Yong ; Shi, Weili ; Wang, Jie ; Xiong, Jijun

Author_Institution

Nat. Key Lab. of Sci. & Technol. on Electron. Test & Meas., North Univ. of China, Taiyuan, China

fYear

2010

Firstpage

1542

Lastpage

1544

Abstract

In this paper, we use a novel way to research the piezoresistance coefficients of AlGaN/GaN HEFT affected by the changes of temperatures in the structure of micro-accelerometer. It is shown that saturation current of HEFT would decrease with the increasing temperature, which is about 0.028mA/°C. However, the device can work well at the temperature range of -50°C to 50°C, which indicates that it can work safely in the larger temperature range. Additional we find that the piezoresistance coefficient of HEFT is declined by the simultaneous increase in the temperature.

Keywords

accelerometers; high electron mobility transistors; microsensors; piezoresistance; AlGaN-GaN; HEFT-micro-accelerometer; piezoresistance coefficients; piezoresistive effect; saturation current; temperature -50 C to 50 C; Aluminum gallium nitride; Current measurement; Gallium nitride; Piezoresistance; Temperature; Temperature measurement; Temperature sensors; GaN; HEFT; I–V characteristic; gravity; temperature-dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667489

Filename

5667489