Title :
Impact of FIB parameters on TEM sample preparation for low-k process
Author :
Yang, Wei-Ming ; Duan, Shu-Qing ; Wang, Yu-Ke ; Guo, Qiang ; Chien, Wei-Ting Kary
Author_Institution :
Semicond. Manuf. Int. Corp., Shanghai, China
Abstract :
The impact of FIB parameters on TEM sample preparation for the low-k dielectric values 2.7 in sub-65nm IC technology nodes is investigated. It is found that the condition of the ion beam and electron imaging has a strong effect on the profile of the low-k dielectric. Porous profile that enhanced by FIB was observed by TEM imaging. This phenomenon becomes more serious in the samples preparation by the conventional FIB method at high accelerating voltages and large milling currents. The FIB induced porosity in low-k dielectric was ascribed to the Si-CH3 bond decomposition, which was caused by thermal interaction and high-energy ion sputtering during the sample preparation.
Keywords :
focused ion beam technology; integrated circuits; ion beam effects; low-k dielectric thin films; porous materials; specimen preparation; sputter deposition; transmission electron microscopy; FIB parameter; IC technology node; TEM sample preparation; electron imaging; focused ion beam technology; high-energy ion sputtering; low-k dielectric; porous profile; size 65 nm; Acceleration; Dielectrics; Integrated circuits; Ion beams; Metals; Morphology; Sputtering; FIB; TEM; low-k dielectric; porosity; sample preparation;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667492
