Impact of FIB parameters on TEM sample preparation for low-k process

Author

Yang, Wei-Ming ; Duan, Shu-Qing ; Wang, Yu-Ke ; Guo, Qiang ; Chien, Wei-Ting Kary

Author_Institution

Semicond. Manuf. Int. Corp., Shanghai, China

fYear

2010

Firstpage

1539

Lastpage

1541

Abstract

The impact of FIB parameters on TEM sample preparation for the low-k dielectric values 2.7 in sub-65nm IC technology nodes is investigated. It is found that the condition of the ion beam and electron imaging has a strong effect on the profile of the low-k dielectric. Porous profile that enhanced by FIB was observed by TEM imaging. This phenomenon becomes more serious in the samples preparation by the conventional FIB method at high accelerating voltages and large milling currents. The FIB induced porosity in low-k dielectric was ascribed to the Si-CH₃ bond decomposition, which was caused by thermal interaction and high-energy ion sputtering during the sample preparation.

Keywords

focused ion beam technology; integrated circuits; ion beam effects; low-k dielectric thin films; porous materials; specimen preparation; sputter deposition; transmission electron microscopy; FIB parameter; IC technology node; TEM sample preparation; electron imaging; focused ion beam technology; high-energy ion sputtering; low-k dielectric; porous profile; size 65 nm; Acceleration; Dielectrics; Integrated circuits; Ion beams; Metals; Morphology; Sputtering; FIB; TEM; low-k dielectric; porosity; sample preparation;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667492

Filename

5667492