95 GHz metamorphic HEMT power amplifiers on GaAs

This paper reports on the first 95 GHz metamorphic HEMT power amplifier demonstration including power as a function of temperature. Two power MHEMT materials with 53% and 53%/43% indium channels are investigated showing a slight advantage to the split channel material. At 95 GHz, G/sub max/ values ranging 8.25-10.8 dB are shown for both materials. Single stage 0.15 mm periphery amplifiers using single 4/spl times/37.5 /spl mu/m FETs show >10 dB small signal gain. Two dB compressed power data at 95 GHz yields 15.3 dBm (224 mW/mm) and PAEs up to 22.8%. Increasing temperature up to 80/spl deg/C results in output power and PAE degradation of only 0.43 dB and 2.6 percentage points, respectively. These promising results are on the path to 100-300 mW MHEMT power amplifiers at W-band with improved manufacturability over InP HEMT.