Title :
A novel Electrostatic Discharge protection design based on SCR
Author :
Zhu, Xuqiang ; Chen, Xingbi
Author_Institution :
Sch. of Microelectron. & Solid-state Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A novel silicon-controlled rectifier (SCR) device with high-current low-voltage triggering characteristics is proposed to improve Electrostatic Discharge (ESD) immunity of the input gate oxide based on a standard 2-μm CMOS technology. The numeral simulation results shows that the device has a low trigger voltage (~11V) to effectively protect the gate oxide under ESD-stress conditions, and it also has a higher trigger current (~0.5A) to avoid the unexpected triggering when the IC is in the normal operating condition. The noise margin against overshooting voltage pulse on the input pad can be larger than 25V. At least a 4000V ESD robustness under PS-mode in Human-Body-Model (HBM) can be obtained with an area of 200μm × 17μm.
Keywords :
CMOS integrated circuits; electrostatic discharge; thyristors; CMOS technology; electrostatic discharge immunity; electrostatic discharge protection design; high-current low-voltage triggering characteristics; human-body-model; input gate oxide; noise margin; silicon-controlled rectifier device; Breakdown voltage; CMOS integrated circuits; Earth Observing System; Electrostatic discharge; Logic gates; Noise; Thyristors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667494
