Metamorphic optoelectronic integrated circuits

Author

Leoni, R.E., III ; Whelan, C.S. ; Marsh, P.F. ; Zhang, Y. ; Hunt, J.G. ; Laighton, C.S. ; Hoke, W.E. ; Kazior, T.E.

Author_Institution

Raytheon RF Components, Andover, MA, USA

Volume

1

fYear

2003

Firstpage

147

Abstract

As the required operational bandwidth of photoreceivers is increased, it becomes desirable to monolithically integrate photodiodes and transistors in order to optimize performance and enhance yield. In this paper we describe our demonstration of material and process capabilities which allow us to integrate high electron mobility transistors and 1.55 /spl mu/m PIN photodiodes on one substrate. The demonstration vehicles used for this are a DC-45 GHz traveling wave amplifier and a photodiode with 12 /spl mu/m optical windows. Measured results of three interconnection approaches (standard attenuator, optimized lossy match, buffer amplifier) are described.

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; integrated optoelectronics; microwave photonics; optical receivers; p-i-n photodiodes; 0 to 45 GHz; 1.55 micron; 45 GHz; HEMTs; OEIC; PIN photodiodes; buffer amplifier; high electron mobility transistors; interconnection approaches; metamorphic optoelectronic integrated circuits; monolithic integration; optimized lossy match; standard attenuator; travelling wave amplifier; Bandwidth; HEMTs; Integrated circuit yield; MODFETs; Optical amplifiers; Optical attenuators; Optical buffering; Optical materials; PIN photodiodes; Vehicles;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1210903

Filename

1210903