Title :
Metamorphic optoelectronic integrated circuits
Author :
Leoni, R.E., III ; Whelan, C.S. ; Marsh, P.F. ; Zhang, Y. ; Hunt, J.G. ; Laighton, C.S. ; Hoke, W.E. ; Kazior, T.E.
Author_Institution :
Raytheon RF Components, Andover, MA, USA
Abstract :
As the required operational bandwidth of photoreceivers is increased, it becomes desirable to monolithically integrate photodiodes and transistors in order to optimize performance and enhance yield. In this paper we describe our demonstration of material and process capabilities which allow us to integrate high electron mobility transistors and 1.55 /spl mu/m PIN photodiodes on one substrate. The demonstration vehicles used for this are a DC-45 GHz traveling wave amplifier and a photodiode with 12 /spl mu/m optical windows. Measured results of three interconnection approaches (standard attenuator, optimized lossy match, buffer amplifier) are described.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; integrated optoelectronics; microwave photonics; optical receivers; p-i-n photodiodes; 0 to 45 GHz; 1.55 micron; 45 GHz; HEMTs; OEIC; PIN photodiodes; buffer amplifier; high electron mobility transistors; interconnection approaches; metamorphic optoelectronic integrated circuits; monolithic integration; optimized lossy match; standard attenuator; travelling wave amplifier; Bandwidth; HEMTs; Integrated circuit yield; MODFETs; Optical amplifiers; Optical attenuators; Optical buffering; Optical materials; PIN photodiodes; Vehicles;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1210903
