DocumentCode :
1632977
Title :
Empirical process model for arsenic diffusion in Si1−xGex alloys
Author :
Sharma, Abhishek A. ; Mane, Sanjay S.
Author_Institution :
Dept. of Electron., Sardar Patel Inst. of Technol., Mumbai, India
fYear :
2010
Firstpage :
956
Lastpage :
959
Abstract :
The thermal diffusion behavior of ion-implanted Arsenic (As) in SiGe alloy has been investigated and modeled. This paper introduces an empirical model consisting of physics-based and process parameters for evaluating the effective diffusivity of Arsenic through SiGe accurately. The process parameters that were found to dominate the enhancement in arsenic diffusion were the Germanium content, diffusion temperature and the anneal time. The model was validated for the germanium content of up to 45% with the reported data and the existing simulation models in Silvaco. The model incorporates all the effects associated with the change in the process parameters which affect the diffusivity of As in relaxed-SiGe.
Keywords :
arsenic; ion implantation; silicon alloys; thermal diffusion; SiGe; SiGe alloy; anneal time; arsenic diffusion; diffusion temperature; empirical process model; germanium content; ion-implanted arsenic; thermal diffusion behavior; Annealing; Equations; Germanium; Mathematical model; Silicon; Silicon germanium; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
Type :
conf
DOI :
10.1109/ICSICT.2010.5667497
Filename :
5667497
Link To Document :
بازگشت