Title :
Investigating the effect of non-stationary transports in UTB MOSFETs with elevated and recessed source/drain by using full band Monte Carlo simulation method
Author :
Zhu, Mingda ; Chen, Si ; Zhang, Wei ; Liu, Xiaoyan ; Du, Gang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
This paper presents on-state characteristics of two types of UTB FD MOSFETs simulated by Monte Carlo method. The two devices under investigation have elevated and recessed source/drain respectively. The comparison of non-stationary transports effect is made between the two devices. Different non-stationary transports effect in the two devices is the cause of different on state characteristics. Transit time and intrinsic capacitance of these devices, which can also affected by non-stationary transports effect, are further presented.
Keywords :
MOSFET; Monte Carlo methods; carrier mobility; semiconductor device models; full band Monte Carlo simulation method; nonstationary transport; on-state characteristics; ultra thin body fully depleted MOSFET; Capacitance; Electric potential; Electron mobility; Logic gates; MOSFETs; Monte Carlo methods; Silicon;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667499
