• DocumentCode
    1633097
  • Title

    Defect characterization and control for SiGe-on-insulator

  • Author

    Wang, Dong ; Yang, Haigui ; Nakashima, Hiroshi

  • Author_Institution
    Art, Sci. & Technol. Center for Cooperative Res., Kyushu Univ., Fukuoka, Japan
  • fYear
    2010
  • Firstpage
    1525
  • Lastpage
    1528
  • Abstract
    Defects in SiGe-On-Insulator (SGOI) fabricated using Ge condensation by dry oxidation method were characterized by optical and electrical methods. The locations of main defect levels were determined to be above mid-gap for SGOI with low Ge fraction (Ge%), which tend to valance band direction and unintentionally induce high hole concentration in SGOI with increasing Ge%. The suppression of defects by post-Al2O3-deposition-annealing was also discussed.
  • Keywords
    Ge-Si alloys; MOSFET; alumina; annealing; oxidation; semiconductor materials; silicon-on-insulator; Al2O3; MOSFET; SiGe; SiGe-on-insulator; defect characterization; defect control; deposition annealing; dry oxidation method; electrical methods; metal-oxide-semiconductor field-effect-transistor; optical methods; Hall effect; MOSFET circuits; Measurement by laser beam; Passivation; Silicon; Silicon germanium; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667501
  • Filename
    5667501
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1633097