Title :
Defect characterization and control for SiGe-on-insulator
Author :
Wang, Dong ; Yang, Haigui ; Nakashima, Hiroshi
Author_Institution :
Art, Sci. & Technol. Center for Cooperative Res., Kyushu Univ., Fukuoka, Japan
Abstract :
Defects in SiGe-On-Insulator (SGOI) fabricated using Ge condensation by dry oxidation method were characterized by optical and electrical methods. The locations of main defect levels were determined to be above mid-gap for SGOI with low Ge fraction (Ge%), which tend to valance band direction and unintentionally induce high hole concentration in SGOI with increasing Ge%. The suppression of defects by post-Al2O3-deposition-annealing was also discussed.
Keywords :
Ge-Si alloys; MOSFET; alumina; annealing; oxidation; semiconductor materials; silicon-on-insulator; Al2O3; MOSFET; SiGe; SiGe-on-insulator; defect characterization; defect control; deposition annealing; dry oxidation method; electrical methods; metal-oxide-semiconductor field-effect-transistor; optical methods; Hall effect; MOSFET circuits; Measurement by laser beam; Passivation; Silicon; Silicon germanium; Substrates;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667501
