Investigation of electrical characteristics of NdAlO3/SiO2 stack gate

Author

Liu, Hong-xia ; Kuang, Qian-wei ; Wang, Zhi-lin ; Gao, Bo ; Wang, Shu-long ; Hao, Yue

Author_Institution

Key Lab. of Minist. of Educ. for Wide Bandgap Semicond. Devices, Xidian Univ., Xi´´an, China

fYear

2010

Firstpage

982

Lastpage

985

Abstract

Degradation of electrical characteristics of NdAlO₃/SiO₂ stack gate under the constant voltage stress (CVS) is presented. It is found that the electron trapping, positive charges and oxide trap generation acts together, which causes the degradation of NdAlO₃/SiO₂ stack gate. The transport mechanisms of the gate leakage current in NdAlO₃/SiO₂ stack gate are also investigated. Frenkel-Poole emission and Schottky emission are the main transport mechanisms of the gate leakage current for the fresh sample, while F-N tunneling and Schottky emission are responsible for the gate leakage current after stress.

Keywords

CMOS integrated circuits; Poole-Frenkel effect; aluminium compounds; leakage currents; neodymium compounds; silicon compounds; CMOS devices; F-N tunneling; Frenkel-Poole emission; NdAlO₃-SiO₂; Schottky emission; complementary metal-oxide-semiconductor; constant voltage stress; electrical characteristics; electron trapping; gate leakage current; oxide trap generation; positive charges; stack gate; transport mechanisms; Capacitance-voltage characteristics; Electron traps; Equations; Leakage current; Logic gates; Stress; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667508

Filename

5667508