• DocumentCode
    1633307
  • Title

    Steady state properties of lock-on current filaments in GaAs [pulsed power switches]

  • Author

    Kambour, K. ; Kang, S. ; Myles, C.W. ; Hjalmarson, H.P.

  • Author_Institution
    Dept. of Phys., Texas Tech. Univ., Lubbock, TX, USA
  • Volume
    2
  • fYear
    1999
  • Firstpage
    791
  • Abstract
    Collective impact ionization has been used to explain lock-on in semi-insulating GaAs under high-voltage bias. The authors have used this theory to study some of the steady state properties of lock-on current filaments. In the steady state, the heat gained from the field is exactly compensated by the cooling due to phonon scattering. In the simplest approximation, the carrier distribution approaches a quasi-equilibrium Maxwell-Boltzmann distribution. In this report, the authors examine the validity of this approximation. They find that this approximation leads to a filament carrier density which is much lower than the high density needed to achieve a quasi-equilibrium distribution. Further work on this subject is in progress.
  • Keywords
    III-V semiconductors; approximation theory; gallium arsenide; photoconducting switches; power semiconductor switches; pulsed power switches; semiconductor device models; statistical mechanics; GaAs; carrier distribution; collective impact ionization; cooling; filament carrier density; heat gain; high-voltage bias; lock-on current filaments; phonon scattering; photoconductive semiconductor switches; pulsed power switches; quasi-equilibrium Maxwell-Boltzmann distribution; semi-insulating GaAs; steady-state properties; Charge carrier density; Cooling; Distribution functions; Gallium arsenide; Heating; Impact ionization; Optical scattering; Optical switches; Plasma temperature; Steady-state;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Pulsed Power Conference, 1999. Digest of Technical Papers. 12th IEEE International
  • Conference_Location
    Monterey, CA, USA
  • Print_ISBN
    0-7803-5498-2
  • Type

    conf

  • DOI
    10.1109/PPC.1999.823633
  • Filename
    823633