Title :
High performance RF power LDMOSFET technology for 2.1GHz power amplifier applications
Author :
Shuming Xu ; Shibib, A. ; Zhijian Xie ; Safar, H. ; Lott, J. ; Farrel, D. ; Mastrapasqua, M.
Author_Institution :
Agere Syst., Allentown, PA, USA
Abstract :
Silicon RF LDMOSFET technology is demonstrated with excellent RF performance. It achieves high power gain of 14.5dB with a high power of 130W at 2.1GHz. Its high efficiency and high linearity makes it highly desired for base station applications. 2mil substrate enables the best-in-class of thermal stability. Low HCI effect, integrated ESD and gold metal ensure high long-term reliability.
Keywords :
UHF field effect transistors; electrostatic discharge; elemental semiconductors; power MOSFET; semiconductor device reliability; silicon; thermal stability; 130 W; 14.5 dB; 2 mil; 2.1 GHz; ESD; HCI effect; RF power LDMOSFET technology; Si; base station applications; efficiency; linearity; long-term reliability; power amplifier applications; power gain; thermal stability; Base stations; Electrostatic discharge; Gold; High power amplifiers; Human computer interaction; Linearity; Radio frequency; Radiofrequency amplifiers; Silicon; Thermal stability;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1210919
