Title :
High-resolution X-ray microdiffraction analysis of local strain in semiconductor materials
Author :
Kimura, Shigeru ; Imai, Yasuhiko ; Sakata, Osami ; Sakai, Akira
Author_Institution :
Res. & Utilization Div., Japan Synchrotron Radiat. Res. Inst., Sayo, Japan
Abstract :
We have developed new microdiffraction system at the SPring-8. This system used a focused beam produced using a phase zone plate combined with a narrow slit, which made a focused beam with a small size and a small angular divergence. Furthermore we can use the two-dimensional x-ray CCD detector, which enable us to measure local reciprocal space maps at many points in a sample, that is, the distribution of strain fields and lattice tilts can be revealed in high-angular- and high-spatial-resolution.
Keywords :
X-ray diffraction; focused ion beam technology; semiconductor materials; SPring-8; X-ray CCD detector; focused beam; high-resolution X-ray microdiffraction analysis; lattice tilts; local strain; microdiffraction system; phase zone plate; semiconductor material; strain field distribution; Aluminum gallium nitride; Charge coupled devices; Detectors; Silicon; Silicon germanium; Strain; Substrates;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667513
