• DocumentCode
    1633379
  • Title

    High-resolution X-ray microdiffraction analysis of local strain in semiconductor materials

  • Author

    Kimura, Shigeru ; Imai, Yasuhiko ; Sakata, Osami ; Sakai, Akira

  • Author_Institution
    Res. & Utilization Div., Japan Synchrotron Radiat. Res. Inst., Sayo, Japan
  • fYear
    2010
  • Firstpage
    1506
  • Lastpage
    1509
  • Abstract
    We have developed new microdiffraction system at the SPring-8. This system used a focused beam produced using a phase zone plate combined with a narrow slit, which made a focused beam with a small size and a small angular divergence. Furthermore we can use the two-dimensional x-ray CCD detector, which enable us to measure local reciprocal space maps at many points in a sample, that is, the distribution of strain fields and lattice tilts can be revealed in high-angular- and high-spatial-resolution.
  • Keywords
    X-ray diffraction; focused ion beam technology; semiconductor materials; SPring-8; X-ray CCD detector; focused beam; high-resolution X-ray microdiffraction analysis; lattice tilts; local strain; microdiffraction system; phase zone plate; semiconductor material; strain field distribution; Aluminum gallium nitride; Charge coupled devices; Detectors; Silicon; Silicon germanium; Strain; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667513
  • Filename
    5667513