Title :
Langatate whispering gallery resonator
Author :
Tsarapkin, D.P. ; Shtin, Nicholas A.
Author_Institution :
Radio Eng. Fac., MPEI, Moscow, Russia
fDate :
6/23/1905 12:00:00 AM
Abstract :
This paper is devoted to basic characteristics of a langatate (LGT) "whispering gallery" dielectric resonator. The main attention is concentrated on frequency-temperature characteristics. Since the principal components of LGT dielectric permittivity vary in opposite directions with temperature it opens a possibility to annul the frequency-temperature dependence using that inherent compensation mechanism. This problem is studied both theoretically and experimentally and conditions providing the desired effect are found. The loss mechanism in the resonator is dominated with piezoelectric effects that lead to microwave Q-factor anisotropy. The measured X-band room temperature self Q-factor exceeds 6000 for EH-modes but is about three times lower for HE-ones
Keywords :
Q-factor; dielectric resonators; gallium compounds; lanthanum compounds; permittivity; La3Ga5.5Ta0.5O14; X-band; dielectric resonator; frequency-temperature characteristics; high-Q resonator; inherent compensation mechanism; langatate whispering gallery resonator; loss mechanism; microwave Q-factor anisotropy; piezoelectric effects; room temperature; Anisotropic magnetoresistance; Dielectric loss measurement; Dielectric losses; Frequency; Optical materials; Optical resonators; Permittivity; Q factor; Temperature dependence; Temperature measurement;
Conference_Titel :
Frequency Control Symposium and PDA Exhibition, 2001. Proceedings of the 2001 IEEE International
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-7028-7
DOI :
10.1109/FREQ.2001.956367
