DocumentCode :
1633413
Title :
Development of the high repetitive impulse voltage generator using semiconductor switches
Author :
Okamura, K. ; Kuroda, S. ; Maeyama, M.
Author_Institution :
Dept. of Electr. & Electron. Syst.., Saitama Univ., Urawa, Japan
Volume :
2
fYear :
1999
Firstpage :
807
Abstract :
Using semiconductor switches of high power thyristor and L-C resonant charging method, we developed a high repetitive impulse voltage generator. In this system, an improved charging circuit with diodes is adopted to lower its impedance of charging circuit and to implement uniform impulse voltage to circuit elements of diodes and resistances. With a five stage IG, high speed charging feature of 50 micro sec and preliminary result of 2 kHz repetitive operation are confirmed.
Keywords :
insulated gate bipolar transistors; power semiconductor switches; pulse generators; pulsed power supplies; thyristor circuits; 2 kHz; 50 mus; L-C resonant charging method; charging circuit; diodes; five stage IG; high power thyristor; high repetitive impulse voltage generator; impedance reduction; resistances; semiconductor switches; uniform impulse voltage; Impedance; Insulated gate bipolar transistors; Power generation; Power semiconductor switches; Resonance; Semiconductor diodes; Switched capacitor circuits; Switching circuits; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Pulsed Power Conference, 1999. Digest of Technical Papers. 12th IEEE International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5498-2
Type :
conf
DOI :
10.1109/PPC.1999.823637
Filename :
823637
Link To Document :
بازگشت