Title :
A 2.5 ppm fully integrated CMOS analog TCXO
Author :
Nemoto, Kenji ; Sato, Ken-ichi
Author_Institution :
Asahikasei Microsyst. Co. Ltd., Kanagawa, Japan
fDate :
6/23/1905 12:00:00 AM
Abstract :
A fully integrated CMOS analog TCXO IC that is suitable for cellular phone and other applications is presented. It was designed in a 1.0 μm CMOS process with an embedded EEPROM and operates from 2.5 V to 5.5 V supply voltage and consumes 1.1 mA at a 3.0 V supply voltage. The chip area is 2.38×1.93 mm2. The temperature stability is better than ±2.5 ppm over -30 to 85°C. Measured phase noise is -115 dBc/Hz and -135 dBc/Hz at 100 Hz and 1 kHz offset, respectively
Keywords :
CMOS analogue integrated circuits; EPROM; circuit stability; compensation; crystal oscillators; frequency stability; -30 to 85 degC; 1 micron; 1.1 mA; 10 to 20 MHz; 2.5 to 5.5 V; CMOS analog TCXO IC; cellular phone; cubic voltage generator; embedded EEPROM; fully integrated TCXO IC; phase noise; temperature compensation method; temperature stability; temperature-compensated crystal oscillator; Analog integrated circuits; Application specific integrated circuits; CMOS analog integrated circuits; CMOS integrated circuits; CMOS process; Cellular phones; EPROM; Stability; Temperature; Voltage;
Conference_Titel :
Frequency Control Symposium and PDA Exhibition, 2001. Proceedings of the 2001 IEEE International
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-7028-7
DOI :
10.1109/FREQ.2001.956373
