Title :
TEM/EELS analysis of ultra low-k inter-metal dielectric
Author :
Singh, Pradeep K. ; Zimmerman, S. ; Schulze, S. ; Schulz, S. ; Hietschold, M.
Author_Institution :
Inst. of Phys., Chemnitz Univ. of Technol., Chemnitz, Germany
Abstract :
As the scaling of transistors proceeds towards the deep sub-micron level, there is a need of replacement of intermetal dielectric (IMD) from SiO2 (k = 4.2) to a material with dielectric constant k <; 3. In this study, we choose porous SiCOH with dielectric constant k = 2.4 for the use as IMD layer. The quantitative analysis of the elements present in SiCOH has been performed by electron energy-loss spectroscopy (EELS) study. The short-range order in porous SiCOH has been investigated by the Selected Area Electron Diffraction (SAED). The local short-range ordering examined by SAED gave a clear idea about the nearest-neighbour distance between atoms. The nearest-neighbour distance for the case of porous SiCOH is around 1.6 Å and the ordering extends upto nearly 5 Å. The average density calculated by SAED is about 2.0 g/cm3.
Keywords :
electron diffraction; electron energy loss spectra; low-k dielectric thin films; permittivity; porous semiconductors; silicon compounds; transistors; transmission electron microscopy; EELS analysis; IMD layer; SAED; SiCOH; TEM analysis; dielectric constant; electron energy-loss spectroscopy; nearest-neighbour distance; porous SiCOH; selected area electron diffraction; transistor scaling; ultra low-k inter-metal dielectric; Core loss; Dielectric constant; Electron microscopy; Films; Silicon;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667524
