Title :
Study on compensation method for vertical trench using anisotropic wet etching
Author :
Yuan, Mingquan ; Yu, Kan ; Yu, Xiaomei
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
This paper investigates anisotropic wet etching characteristics of (110)-oriented silicon wafers in KOH etchant for obtaining vertical trench. To obtain a near rectangled trench instead of parallelogrammic trench with concave corners of 70° and 110°, a new compensation method was proposed. With this design, a trench with all sidewalls vertical was obtained by an over etching of silicon. Due to different widths of the trench, the over etching rate in releasing inclined crystal plane {111} varies from 0.32μm/min to 0.43μm/min.
Keywords :
compensation; etching; isolation technology; silicon; anisotropic wet etching characteristics; compensation method; etchant; etching rate; parallelogrammic trench; rectangled trench; silicon etching; silicon wafers; vertical trench; Actuators; Crystals; Microelectronics; Sensors; Silicon; Wet etching;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667525
