Schottky barrier tuning at NiSi/Si interface using pre-silicide aluminum and sulfur co-implant

In this paper, we examine the physical properties of NiSi/p-Si implanted with various combinations of aluminum (Al) and sulfur (S) doses for Schottky barrier tuning. Techniques used included HRTEM, TOF-SIMS, HAADF STEM, and EDX. We also measured the integral interfacial dose (IID) of Al and S, i.e. amount of Al and S found with 2.5 nm of the interface, and correlated it to the Schottky barrier height (SBH). For the split with the same Al and S implant dose, the SBH tuning effect of Al overwhelms that of S and the extracted SBH is 0.137 eV.