Title :
New metal-insulator-metal capacitor based on SrTiO3/Al2O3/SrTiO3 laminate dielectric
Author :
Lee, J.H. ; Lin, Y.C. ; Chen, B.H. ; Tsai, C.Y.
Author_Institution :
Dept. of Electron. Eng., Ching Yun Univ., Jhongli, Taiwan
Abstract :
A novel high-performance metal-insulator-metal (MIM) capacitor for analog and radio-frequency (RF) applications has been developed using SrTiO3/Al2O3/SrTiO3 laminate as the dielectric. A very high capacitance density of 19.13 fF/μm2 has been achieved due to the perovskite SrTiO3 (STO) with a very high dielectric constant of 145. This MIM capacitor also displays a quadratic voltage coefficient of 610 ppm/V2 and a good leakage current of 5 × 10-9 A/cm2 at 2 V, which is attributed to the inserted Al2O3. Since experiments demonstrated that Schottky emission is the dominant conduction mechanism, further reduced leakage characteristic and quadratic voltage coefficient could be achieved by using high work-function (Φm) materials as the electrodes to increase the band offset. The combination of the promising electrical properties and the compatible process integration in standard CMOS technologies reveal this structure highly appropriate for advanced MIM capacitors.
Keywords :
CMOS integrated circuits; MIM devices; aluminium compounds; capacitors; laminates; strontium compounds; titanium compounds; CMOS technology; SrTiO3-Al2O3-SrTiO3; analog application; conduction mechanism; high work-function material; laminate dielectric; metal-insulator-metal capacitor; perovskite; radio frequency application; Aluminum oxide; Capacitance; Electrodes; Laminates; Leakage current; MIM capacitors; Synthetic aperture sonar;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667529
