Title :
Study of the sputtered Mo/TaN and Mo-Ta thin film as diffusion barrier for copper metallization
Author :
Chen, Fei ; Ding, Shao-Feng ; Zhang, Xiao-Meng ; Qu, Xin-Ping
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
In this work, the properties of sputtered Mo/TaN bilayers and Mo-Ta single layer as diffusion barriers were investigated for Cu metallization. The experimental results show that the Mo(5nm)/TaN(5nm) stack can withstand annealing up to 600°C for 30min and the Mo-Ta(5nm) alloy barrier can effectively prevent Cu diffusion after 500°C annealing.
Keywords :
annealing; copper; diffusion barriers; semiconductor device metallisation; semiconductor thin films; sputtering; Mo-TaN; alloy barrier; annealing; copper metallization; diffusion barrier; sputtered bilayers; sputtered thin film; Annealing; Copper; Films; Resistance; Silicon; Surface morphology;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667536
