A fully integrated low-power CMOS power amplifier for biomedical applications

Author

Abdelsayed, Samar M. ; Deen, M. Jamal ; Nikolova, Natalia K.

Author_Institution

Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont.

fYear

2005

Firstpage

257

Lastpage

260

Abstract

There is an emerging need for fully integrated power amplifiers (PAs) for very low-power implanted wireless transceivers. A fully integrated power amplifier circuit operating at 2.45 GHz is presented in this work. The layout of the circuit was designed carefully. Optimization was performed on the interconnections between the circuit components, which resulted in minimized parasitics of the on-silicon metal wires and hence very good performance. Measurement results show that at 1.4 V supply, the PA delivers an output power of 4.5 mW with a 28.5 % power-added efficiency (PAE) and a gain of 19.5 dB. With this performance, the circuit has proved to be well-suited for low-power biomedical implanted transceiver systems

Keywords

CMOS integrated circuits; UHF integrated circuits; UHF power amplifiers; biomedical electronics; interconnections; low-power electronics; prosthetics; transceivers; 1.4 V; 2.45 GHz; 4.5 mW; biomedical applications; circuit component interconnections; fully integrated low-power CMOS power amplifier; low-power biomedical implanted transceiver systems; minimized parasitics; on-silicon metal wires; power-added efficiency; very low-power implanted wireless transceivers; Application software; Biomedical measurements; CMOS technology; Circuit simulation; Humans; Integrated circuit measurements; Power amplifiers; Power generation; Radio frequency; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Technology, 2005. The European Conference on

Conference_Location

Paris

Print_ISBN

2-9600551-1-X

Type

conf

DOI

10.1109/ECWT.2005.1617706

Filename

1617706