DocumentCode :
1633952
Title :
A fully integrated low-power CMOS power amplifier for biomedical applications
Author :
Abdelsayed, Samar M. ; Deen, M. Jamal ; Nikolova, Natalia K.
Author_Institution :
Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont.
fYear :
2005
Firstpage :
257
Lastpage :
260
Abstract :
There is an emerging need for fully integrated power amplifiers (PAs) for very low-power implanted wireless transceivers. A fully integrated power amplifier circuit operating at 2.45 GHz is presented in this work. The layout of the circuit was designed carefully. Optimization was performed on the interconnections between the circuit components, which resulted in minimized parasitics of the on-silicon metal wires and hence very good performance. Measurement results show that at 1.4 V supply, the PA delivers an output power of 4.5 mW with a 28.5 % power-added efficiency (PAE) and a gain of 19.5 dB. With this performance, the circuit has proved to be well-suited for low-power biomedical implanted transceiver systems
Keywords :
CMOS integrated circuits; UHF integrated circuits; UHF power amplifiers; biomedical electronics; interconnections; low-power electronics; prosthetics; transceivers; 1.4 V; 2.45 GHz; 4.5 mW; biomedical applications; circuit component interconnections; fully integrated low-power CMOS power amplifier; low-power biomedical implanted transceiver systems; minimized parasitics; on-silicon metal wires; power-added efficiency; very low-power implanted wireless transceivers; Application software; Biomedical measurements; CMOS technology; Circuit simulation; Humans; Integrated circuit measurements; Power amplifiers; Power generation; Radio frequency; Transceivers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wireless Technology, 2005. The European Conference on
Conference_Location :
Paris
Print_ISBN :
2-9600551-1-X
Type :
conf
DOI :
10.1109/ECWT.2005.1617706
Filename :
1617706
Link To Document :
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