Investigation of Co/TaN bilayer as Cu diffusion barrier

Author

Lu, Hai-Sheng ; Ding, Shao-Feng ; Ru, Guo-Ping ; Jiang, Yu-Long ; Qu, Xin-Ping

Author_Institution

Dept. of Microelectron., Fudan Univ., Shanghai, China

fYear

2010

Firstpage

1045

Lastpage

1047

Abstract

The diffusion barrier properties of Co/TaN bilayer as Cu adhesion layer/diffusion barrier on the Si and low k (k = 2.5) substrates were investigated. The barrier was prepared by using ion-beam sputtering technique. The barrier property was investigated by sheet resistance, X-ray diffraction (XRD), and Auger electron spectroscopy (AES) and electrical measurements. No obvious Cu diffusion and agglomeration was observed after annealing at 500°C for 30 min. Results show that Co/TaN has a good potential as cost effective adhesion/diffusion stack in copper metallization.

Keywords

Auger electron spectra; X-ray diffraction; adhesion; chemical interdiffusion; cobalt; copper; diffusion barriers; electrical resistivity; semiconductor-metal boundaries; sputtered coatings; tantalum compounds; AES; Auger electron spectroscopy; Co-TaN; Cu; Si; X-ray diffraction; XRD; adhesion layer; cost effective adhesion-diffusion stack; diffusion barrier properties; electrical measurements; ion-beam sputtering technique; low k substrates; sheet resistance; temperature 500 degC; time 30 min; Adhesives; Annealing; Copper; Resistance; Silicon; Temperature measurement; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667538

Filename

5667538