DocumentCode
1634086
Title
Column-parallel integrating ADCs for infrared image sensor
Author
Song, Ziqi ; Wu, Dong ; Shen, Yanzhao ; Xu, Jun
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear
2010
Firstpage
1477
Lastpage
1479
Abstract
10bit column-parallel integrating ADCs intended for infrared image sensor are presented in this paper. The column scale is 160 and the width of each column cell is 32μm. The ADCs introduce a proposed architecture to eliminate offset error and a novel circuit structure to substrate background signal. A prototype ADCs is designed in 0.35μm CMOS technology with 5V power supply. The simulation results show a peak SFDR of 69.17dB with 25μW power of each column cell.
Keywords
CMOS image sensors; analogue-digital conversion; infrared detectors; CMOS technology; column-parallel integrating ADC; infrared image sensor; offset error; power 25 muW; size 0.35 mum; size 32 mum; substrate background signal; voltage 5 V; Computer architecture; Microprocessors; Noise; Pixel; Radiation detectors; Temperature measurement; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667540
Filename
5667540
Link To Document