• DocumentCode
    1634113
  • Title

    Recent progress of phase change memory (PCM) and resistive switching random access memory (RRAM)

  • Author

    Wong, H. -S Philip ; Kim, SangBum ; Lee, Byoungil ; Caldwell, Marissa A. ; Liang, Jiale ; Wu, Yi ; Jeyasingh, Rakesh Gnana David ; Yu, Shimeng

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2010
  • Firstpage
    1055
  • Lastpage
    1060
  • Abstract
    Conventional memories such as SRAM, DRAM, and FLASH have set a very high cost/performance standard. Yet, recent advances in new materials, device technologies and circuits have made many emerging memories attractive candidates for a new generation of memories. This paper gives an overview of our recent research work on phase change memory (PCM) and metal oxide resistive switching memory (RRAM).
  • Keywords
    DRAM chips; SRAM chips; flash memories; phase change memories; DRAM; FLASH; SRAM; metal oxide resistive switching memory; phase change memory; resistive switching random access memory; Crystallization; Phase change materials; Phase change memory; Programming; Resistance; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667542
  • Filename
    5667542
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1634113