DocumentCode
1634321
Title
Two-transistor active pixel image sensor with active diode reset
Author
Zhang, Dongwei ; He, Frank ; Bermak, Amine ; Chan, Mansun
Author_Institution
Dept. of ECE, Hong Kong Univ. of Sci. & Technol., Hong Kong, China
fYear
2010
Firstpage
1468
Lastpage
1470
Abstract
A two-transistor active pixel image sensor (2T-APS) architecture is proposed. Instead of a reset transistor, a diode within the pinned photodiode sensor is used to reset the charge-sensing node in each pixel without any extra area. The new architecture can be used to increase the fill factor and/or reduce the pixel pitch. A test structure of the 2T-APS has been demonstrated using 0.35 μm CMOS technology featuring a 7μm × 7μm pixel size with a fill factor of 38%. The pixel characteristics are presented and discussed.
Keywords
CMOS image sensors; image sensors; p-i-n photodiodes; transistors; 2T-APS; CMOS technology; active diode reset; charge-sensing node; pinned photodiode sensor; pixel pitch; reset transistor; size 0.35 mum; two-transistor active pixel image sensor; Capacitance; Image sensors; Optical sensors; Optical switches; Pixel; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667549
Filename
5667549
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