DocumentCode :
1634340
Title :
Project of semiconductor high-power high-repetition rate compact accelerator
Author :
Galstjan, E. ; Kazanskiy, L.
Author_Institution :
MRTI, Moscow, Russia
Volume :
2
fYear :
1999
Firstpage :
949
Abstract :
The paper describes a project of a compact accelerator (120 kV, 2 kA 15-25 ns pulse duration, 1 kHz-repetition rate). To attract the attention of the accelerator community to the abilities of modern power fast semiconductors, this device is suggested and created using modern high-power super-fast semiconductor switches.
Keywords :
particle accelerators; power semiconductor switches; pulsed power switches; 1 kHz; 120 kV; 15 to 25 ns; 2 kA; high-power super-fast semiconductor switches; high-repetition rate compact accelerator; inductive energy storage; Acceleration; Capacitors; Inductors; Jitter; Magnetic switching; Modems; Semiconductivity; Semiconductor devices; Switches; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Pulsed Power Conference, 1999. Digest of Technical Papers. 12th IEEE International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5498-2
Type :
conf
DOI :
10.1109/PPC.1999.823673
Filename :
823673
Link To Document :
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