Title :
A study on metal-insulator-silicon hydrogen sensor with La2O3 as gate insulator
Author :
Chen, Gang ; Lai, P.T. ; Yu, Jerry
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
Abstract :
A new MIS Schottky-diode hydrogen sensor with La2O3 as gate insulator was fabricated. Its hydrogen-sensing properties were studied from room temperature (RT) to 300°C. Results showed that the device had excellent hydrogen-sensing performance below about 250°C.
Keywords :
Schottky diodes; gas sensors; lanthanum compounds; La2O3; MIS Schottky diode; gate insulator; hydrogen sensor; metal insulator silicon; Logic gates; Schottky barriers; Sensitivity; Silicon; Substrates; Temperature; Temperature sensors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667552
