Title :
The electro-thermal response properties of miro pirani vacuum gauge
Author :
Zhang, Jinwen ; Wang, Long ; Wang, Xin ; Jiang, Wei
Author_Institution :
Nat. Key Lab. of Micro/ Nanometer Fabrication Technol., Peking Univ., Beijing, China
Abstract :
In this paper, a micro vacuum pirani gauge made of single crystal silicon has been developed and its temperature and DC current response properties in different pressures were firstly studied detailedly. The resistance of it increases with the temperature exponentially. There is a current threshold resulting from the materials characteristics and the precision of the instrument at low pressure. And the DC current threshold increases with the pressure. Besides, Higher DC current and lower pressure will leads to longer temperature stabilized time.
Keywords :
elemental semiconductors; microsensors; silicon; vacuum gauges; DC current response; DC current threshold; Si; electrothermal response properties; micropirani vacuum gauge; single crystal silicon; Electrical resistance measurement; Heating; Resistance; Resistors; Silicon; Temperature; Temperature measurement;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667555
