Title :
Comparative study in response time between a current-mode and a voltage-mode sense amplifier for resistive loads in MRAM
Author :
Yu, Hye-Seung ; Lim, Jong-Chul ; Kim, Soo-Won ; Kim, In-Mo ; Kim, Sung-Jong ; Song, Sang-Hun
Author_Institution :
Dept. of Electron. Eng., Korea Univ., Seoul, South Korea
Abstract :
We comparatively study the response times of a current-mode and a voltage-mode sense amplifier for the resistive loads used in MRAM (magneto-resistive random access memories). In order to limit the applied voltage below a critical value of 0.4 V across the resistors, sense amplifiers with separate input/output nodes are selected. A systematic simulation study for the resistive load variations in range of 0.5 kΩ to 8.5 kΩ using a 0.35 μm-CMOS technology shows that the current-mode sense amplifier shows a superior response time of at least 1.3 nsec over the voltage-mode sense amplifier.
Keywords :
CMOS analogue integrated circuits; amplifiers; circuit simulation; magnetoresistive devices; random-access storage; 0.35 micron; 0.5 to 8.5 kohm; CMOS technology; applied voltage; circuit simulation; current-mode sense amplifier; magneto-resistive random access memory; resistive loads; response time; voltage-mode sense amplifier; Circuits; Clamps; Degradation; Delay; Impedance; Load management; Magnetic separation; Magnetic tunneling; Resistors; Voltage;
Conference_Titel :
Communications, Circuits and Systems, 2004. ICCCAS 2004. 2004 International Conference on
Print_ISBN :
0-7803-8647-7
DOI :
10.1109/ICCCAS.2004.1346385
