Title :
Thermal physical model for Ge2Sb2Te5 phase change memory in electrical memory device
Author :
Cai, Daolin ; Song, Zhitang ; Chen, Houpeng
Author_Institution :
State Key Lab. of Functional Mater. for Inf., Chinese Acad. of Sci., Shanghai, China
Abstract :
In order to calculate the temperature of the phase change memory (PCM) cell, a thermal physical model of the PCM device having Ge2Sb2Te5 (GST) layer has been proposed and demonstrated. By calculating and comparing with the Joule heating of the PCM cell at different programming state between based on the voltage - current curves and based on the formula to calculate temperature, it is found that the Joule heating increases with the amorphous fraction increasing.
Keywords :
antimony compounds; germanium compounds; phase change materials; phase change memories; GST layer; Ge2Sb2Te5; Joule heating; PCM cell; electrical memory device; phase change memory; thermal physical model; Electron devices; Equations; Heating; Mathematical model; Phase change materials; Programming; Resistance;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667560
