A complete self-defined empirical model for enhancement-mode AlGaAs/InGaAs pHEMTs

We propose a complete self-defined empirical large-signal and noise including model for enhancement-mode AlGaAs/InGaAs pHEMTs. This model achieves excellent fitting of the DC transconductance, g/sub m/, which considers the difference of the drain-to-source conductance between DC and RF measurements. In addition, for a full prediction at various biases, all parameters of the model are characterized against the gate-to-source and drain-to-source voltages. In consequence, the predictions of the power and IM3 are very accurate. Additionally, it can also predict the NF/sub min/ and /spl Gamma//sub opt/ points well using the noise parameters by calculating the thermal noise of the equivalent circuit model. This noise figure prediction including model is not always available from the commonly used conventional pHEMT models.