Title :
Remarkable improvement in switching ratio of ReRAM using In/poly-Fe2O3/Nb-SrTiO3 devices
Author :
Chen, Yuan-Sha ; Chen, Bin ; Gao, Bin ; Lian, Gui-Jun ; Liu, Li-Feng ; Liu, Xiao-Yan ; Kang, Jin-Feng
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
Typical bipolar resistive switching behavior are observed in the In/poly-Fe2O3/Nb-SrTiO3 (Nb-STO) devices. Rectifying I-V characteristics along with switching ratio significantly related to the polarity of read voltage have been found. A negative read voltage remarkable enhances the switching ratio to 107 comparing with 102 for the positive polarity, which demonstrates an efficient way to improve ReRAM´s switching characteristic. Furthermore, the cycle-to-cycle uniformity, set&reset current, resistance distribution and retention time have been measured that exhibits good device performance for promising applications.
Keywords :
random-access storage; I-V characteristics; In-Fe2O3-Nb-SrTiO3; ReRAM; bipolar resistive switching behavior; cycle-to-cycle uniformity; negative read voltage; positive polarity; resistance distribution; retention time; set & reset current; switching ratio; Films; Immune system; Iron; Performance evaluation; Resistance; Switches; Temperature measurement;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667563
