Title :
A new four-transistor poly-si pixel circuit for AMOLED
Author :
Wang, Longyan ; Liao, Congwei ; Liang, Yinan ; Zhang, Shengdong
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
This paper presents a new poly-Si thin film transistor (TFT) pixel circuit for active-matrix organic light-emitting diode (AMOLED) displays. The pixel circuit has a simple four-transistor configuration and is controlled by two adjacent gate scan pulses, allowing a small circuit area and simple driving scheme. Simulation results show that this pixel circuit can provide the OLED with a current non-uniformity of less than 3% under ±0.5V threshold voltage (VTH) variation.
Keywords :
elemental semiconductors; organic light emitting diodes; silicon; thin film transistors; AMOLED; Si; TFT; active-matrix organic light-emitting diode; four-transistor polysilicon pixel circuit; Active matrix organic light emitting diodes; Integrated circuit modeling; Logic gates; Pixel; Thin film transistors; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667564
