• DocumentCode
    1634702
  • Title

    A new four-transistor poly-si pixel circuit for AMOLED

  • Author

    Wang, Longyan ; Liao, Congwei ; Liang, Yinan ; Zhang, Shengdong

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing, China
  • fYear
    2010
  • Firstpage
    1453
  • Lastpage
    1455
  • Abstract
    This paper presents a new poly-Si thin film transistor (TFT) pixel circuit for active-matrix organic light-emitting diode (AMOLED) displays. The pixel circuit has a simple four-transistor configuration and is controlled by two adjacent gate scan pulses, allowing a small circuit area and simple driving scheme. Simulation results show that this pixel circuit can provide the OLED with a current non-uniformity of less than 3% under ±0.5V threshold voltage (VTH) variation.
  • Keywords
    elemental semiconductors; organic light emitting diodes; silicon; thin film transistors; AMOLED; Si; TFT; active-matrix organic light-emitting diode; four-transistor polysilicon pixel circuit; Active matrix organic light emitting diodes; Integrated circuit modeling; Logic gates; Pixel; Thin film transistors; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667564
  • Filename
    5667564
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1634702