Multilevel storage characteristics in ZrO2-ReRAM brought about by ideal current limiter

Author

Lian, Wen-Tai ; Long, Shi-Bing ; Lv, Hang-Bing ; Liu, Qi ; Li, Ying-Tao ; Wang, Yan ; Zhang, Sen ; Dai, Yue-Hua ; Chen, Jun-ning ; Liu, Ming

Author_Institution

Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Chinese Acad. of Sci., Beijing, China

fYear

2010

Firstpage

1112

Lastpage

1114

Abstract

1T1R-architecture devices were fabricated by integrating ZrO₂ based crossbar structure ReRAM onto a foundry-built MOSFET platform. Multilevel operation was realized by using the current limit of a selected cell transistor in the set process. The current level was determined by the transistor´s gate voltage, resulting in the control of electrical resistance of the filamentary conductive paths in the low resistive state.

Keywords

MOSFET; current limiters; electric resistance; random-access storage; zirconium compounds; 1T1R-architecture devices; ZrO₂; crossbar structure ReRAM; electrical resistance; filamentary conductive paths; foundry-built MOSFET platform; ideal current limiter; low resistive state; multilevel storage characteristics; resistive random access memory; transistor gate voltage; Computer architecture; Copper; Electrodes; Logic gates; MOSFET circuits; Resistance; Transistors; Compliance current; Multilevel; Parasitic capacitance; Resistive switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667565

Filename

5667565