Title :
Nanoscale flash and resistive switching memories using IrOx metal nanocrystals
Author :
Banerjee, W. ; Maikap, S.
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Tao-Yuan, Taiwan
Abstract :
The nanoscale (EOT<;6 nm) flash and resistive switching memories using IrOx nanocrystals have been investigated. The IrOx nanocrystals embedded in high-κ Al2O3 film are observed by both high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy. The average size and density of IrOx nanocrystals are found to be ~3 nm and ~7×1012/cm2, respectively. The flash memory devices with excellent endurance of 104 cycles and moderate retention of 10 hours are obtained. A bipolar resistive switching memory with a resistance ratio of ~1.4×102 is observed after 1 hour of retention time.
Keywords :
X-ray spectroscopy; alumina; bipolar memory circuits; flash memories; high-k dielectric thin films; iridium compounds; nanostructured materials; transmission electron microscopy; Al2O3; IrOx; bipolar resistive switching memory; high-k dielectric thin film; high-resolution transmission electron microscopy; metal nanocrystal; nanoscale flash memory; x-ray photoelectron spectroscopy; Aluminum oxide; Flash memory; Hysteresis; Logic gates; Nanocrystals; Resistance; Switches;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667566
