Title :
Bistable resistance switching of Cu/Cu: HfO2/Pt for nonvolatile memory application
Author :
Wang, Yan ; Long, Shi-Bing ; Lv, Hang-Bing ; Liu, Qi ; Wang, Qin ; Li, Ying-Tao ; Zhang, Sen ; Lian, Wen-Tai ; Yang, Jian-Hong ; Liu, Ming
Author_Institution :
Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Chinese Acad. of Sci., Beijing, China
Abstract :
The resistance switching characteristics of Cu doped HfO2 film are investigated for nonvolatile memory. Two stable states can be achieved under both pulse and DC electrical stress. Good performances including large storage window, fast operation speed, good endurance, and long time retention are shown in this device. The metallic filament is confirmed as the physical origin for resistance switching based on the temperature test.
Keywords :
copper; hafnium compounds; platinum; random-access storage; semiconductor doping; DC electrical stress; HfO2-Pt:Cu-Cu; bistable resistance switching; metallic filament; nonvolatile memory application; pulse electrical stress; storage window; Copper; Electrodes; Nonvolatile memory; Performance evaluation; Resistance; Switches; Temperature; Cu doping; hafnium oxide; nonvolatile memory (NVM); resistive random access memory (ReRAM); resistive switching;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667568
