Bistable resistance switching of Cu/Cu: HfO2/Pt for nonvolatile memory application

Author

Wang, Yan ; Long, Shi-Bing ; Lv, Hang-Bing ; Liu, Qi ; Wang, Qin ; Li, Ying-Tao ; Zhang, Sen ; Lian, Wen-Tai ; Yang, Jian-Hong ; Liu, Ming

Author_Institution

Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Chinese Acad. of Sci., Beijing, China

fYear

2010

Firstpage

1118

Lastpage

1120

Abstract

The resistance switching characteristics of Cu doped HfO₂ film are investigated for nonvolatile memory. Two stable states can be achieved under both pulse and DC electrical stress. Good performances including large storage window, fast operation speed, good endurance, and long time retention are shown in this device. The metallic filament is confirmed as the physical origin for resistance switching based on the temperature test.

Keywords

copper; hafnium compounds; platinum; random-access storage; semiconductor doping; DC electrical stress; HfO₂-Pt:Cu-Cu; bistable resistance switching; metallic filament; nonvolatile memory application; pulse electrical stress; storage window; Copper; Electrodes; Nonvolatile memory; Performance evaluation; Resistance; Switches; Temperature; Cu doping; hafnium oxide; nonvolatile memory (NVM); resistive random access memory (ReRAM); resistive switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667568

Filename

5667568