Title :
The enhancement of write throughout for phase change memory
Author :
Ding, Sheng ; Song, Zhitang ; Chen, Houpeng ; Cai, Daolin ; Chen, Xiaogang
Author_Institution :
State Key Lab. of Functional Mater. for Inf., Chinese Acad. of Sci., Shanghai, China
Abstract :
The unbalanced speed for writing 0 (Reset) and 1 (Set) of phase change memory (PCM) causes lots of internal timing fragmentation during conventional parallel writing process. This fragmentation is the bottleneck of PCM writing speed. In this work, a novel self-write method is developed to eliminate fragmentation and enhance write throughout. The experimental result shows that this method enhances write throughout by 10%-25%.
Keywords :
phase change memories; PCM writing speed; internal timing fragmentation; parallel writing process; phase change memory; self-write method; unbalanced speed for writing; write throughout; Heating; Integrated circuit modeling; Phase change materials; Phase change memory; Temperature; Timing; Writing;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667569
