• DocumentCode
    1634886
  • Title

    Comparing the switching characteristics of two resistive RAM technologies: Cu-SiO2 conductive-bridging-RAMs and HfO2 Oxide-RAMs

  • Author

    Gonon, Patrice ; Vallee, Christophe ; Jousseaume, Vincent ; Bernard, Yoann ; Mannequin, Cédric ; Mougenot, Mathieu ; Grampeix, Helen

  • Author_Institution
    LTM, UJF, Grenoble, France
  • fYear
    2010
  • Firstpage
    1124
  • Lastpage
    1126
  • Abstract
    We compare the switching behavior of two classes of resistive RAMs (RRAMs), namely Cu-SiO2 based conductive-bridging-RAMS (CBRAMs) and HfO2 based Oxide-RRAMs (OxRRAMs). In both devices the ON/OFF ratios are high, the set voltage is reproducible from cycle to cycle, and the reset voltage displays large dispersion. No forming stage is required in the investigated OxRRAMs. CBRAMs offer much lower programming voltage and current. The switching kinetics is limited by oxygen vacancy diffusion in OxRRAMs and by copper nucleation in CBRAMs.
  • Keywords
    copper compounds; nucleation; random-access storage; silicon compounds; Cu-SiO2; conductive-bridging-RAM; copper nucleation; oxide RAM; resistive RAM technologies; switching characteristics; switching kinetics; Anodes; Copper; Delay; Electric fields; Gold; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667571
  • Filename
    5667571
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1634886