Title :
A design of access-diode-array in phase change Random Access memory
Author :
Li, Yi-Jin ; Song, Zhi-Tang ; Ling, Yun ; Zhang, Chao ; Gong, Yue-Feng ; Luo, Sheng-Qin ; Jia, Xiao-Ling
Author_Institution :
State Key Lab. of Functional Mater. for Inf., Chinese Acad. of Sci., Shanghai, China
Abstract :
In this paper, a preparation process of PCRAM access-diode-array with proprietary intellectual property rights (PIPR) is shown simply. Then, Relationship between device parameters and diode performance, including drive-current, breakdown, especially disturb-current, which influences the data-veracity and reliability of PCRAM, is analyzed from the views of carriers distribution and parasitic PNP-BJT. At the end, a simple and effective method, which can reduce disturb-current radio from 15% to 0.25%, is shown according to the technology process. TCAD simulation obeyed the SMIC 0.13um CMOS process.
Keywords :
CMOS integrated circuits; industrial property; random-access storage; technology CAD (electronics); CMOS process; SMIC; TCAD simulation; access-diode-array; device parameters; diode performance; phase change random access memory; proprietary intellectual property rights; technology process; Neodymium; Performance evaluation; Phase change random access memory; Reliability; Semiconductor process modeling; Very large scale integration; Access diode; TCAD; breakdown voltage; disturb-current; drive-current; phase change Random Access memory (PCRAM);
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667572
