A design of access-diode-array in phase change Random Access memory

Author

Li, Yi-Jin ; Song, Zhi-Tang ; Ling, Yun ; Zhang, Chao ; Gong, Yue-Feng ; Luo, Sheng-Qin ; Jia, Xiao-Ling

Author_Institution

State Key Lab. of Functional Mater. for Inf., Chinese Acad. of Sci., Shanghai, China

fYear

2010

Firstpage

1127

Lastpage

1129

Abstract

In this paper, a preparation process of PCRAM access-diode-array with proprietary intellectual property rights (PIPR) is shown simply. Then, Relationship between device parameters and diode performance, including drive-current, breakdown, especially disturb-current, which influences the data-veracity and reliability of PCRAM, is analyzed from the views of carriers distribution and parasitic PNP-BJT. At the end, a simple and effective method, which can reduce disturb-current radio from 15% to 0.25%, is shown according to the technology process. TCAD simulation obeyed the SMIC 0.13um CMOS process.

Keywords

CMOS integrated circuits; industrial property; random-access storage; technology CAD (electronics); CMOS process; SMIC; TCAD simulation; access-diode-array; device parameters; diode performance; phase change random access memory; proprietary intellectual property rights; technology process; Neodymium; Performance evaluation; Phase change random access memory; Reliability; Semiconductor process modeling; Very large scale integration; Access diode; TCAD; breakdown voltage; disturb-current; drive-current; phase change Random Access memory (PCRAM);

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667572

Filename

5667572