Title :
Simple and low cost fabrication process of high density vertical Phase-Change Random Access Memory integrated with Electroless Deposition method
Author :
Cheng, Kaifang ; Wang, Xiaofeng ; Wang, Xiaodong ; Zhang, Jiayong ; Ma, Huili ; Ji, An ; Yang, Fuhua
Author_Institution :
Eng. Res. Center for Semicond. Integrated Technol., Chinese Acad. of Sci., Beijing, China
Abstract :
Electroless Deposition (ELD) method was developed to fabricate metal nanoplug heater for vertical Phase-Change Random Access Memory (PCRAM) application. We demonstrated a functional vertical PCRAM device with heater diameter size around 9 μm by ELD method without Chemical Mechanical Planarization (CMP) process. It was also demonstrated that even 50 nm and 90 nm metal nanoplug can be easily fabricated by ELD process. Therefore ELD process for metal plug fabrication has great potential for low cost and high density vertical PCRAM application.
Keywords :
chemical mechanical polishing; electroless deposition; phase changing circuits; planarisation; random-access storage; CMP process; ELD method; chemical mechanical planarization; electroless deposition method; high density vertical phase-change random access memory; nanoplug heater; size 50 nm; size 90 nm; vertical phase-change random access memory application; Fabrication; Heating; Nickel; Phase change random access memory; Plugs; Tungsten;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667574