Title :
SiNx-doped Sb2Te3 films for phase change memory
Author :
Guo, Gang ; Feng, Jie ; Zhang, Yin
Author_Institution :
Inst. of Micro/Nano Sci. & Technol., Shanghai Jiao Tong Univ., Shanghai, China
Abstract :
SiNx-doped Sb2Te3 films for nonvolatile memories were prepared by co-sputtering with Si3N4 and Sb2Te3 alloy targets. Electrical and structural properties were investigated and compared to those of conventional GST and pure Sb2Te3 film by annealing temperature-dependent resistivity measurement, x-ray diffraction (XRD). The resistivity ratio is larger than 105 during the phase transition, accompanied with a smaller thickness change of 4.6% in contrast to that of GST film of 6.8%. The main crystal state of the doped film is Sb2Te3 rhombohedra structure. Micrometer-sized devices were also fabricated and examined. The I-V characteristic of the device showed typical memory switching effect.
Keywords :
X-ray diffraction; antimony compounds; electric properties; electric resistance measurement; electrical resistivity; phase change memories; phase transformations; semiconductor doping; semiconductor thin films; silicon compounds; sputter deposition; Sb2Te3:SiNx; XRD; alloy target; annealing temperature-dependent resistivity measurement; co-sputtering; doped film; electrical property; memory switching effect; micrometer-sized device; nonvolatile memories; phase change memory; phase transition; resistivity ratio; rhombohedra structure; structural property; x-ray diffraction; Annealing; Conductivity; Films; Phase change random access memory; Resistance; X-ray scattering; Ge2Sb2Te5; I–V; SiNx-doped Sb2Te3; crystalline resistivity; phase change memory; thickness reduction;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667578
