Title :
Pulse voltage dependent resistive switching behaviors of HfO2-based RRAM
Author :
Gao, Bin ; Chen, Bing ; Chen, Yuansha ; Liu, Lifeng ; Liu, Xiaoyan ; Han, Ruqi ; Kang, Jinfeng
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
Abstract :
Voltage pulse dependent resistive switching behavior during SET process in HfO2-based RRAM device is investigated. When a resistor is connected in series to RRAM during the SET process, the resistance uniformity can be improved. Voltage pulse controlled resistance states were observed. This behavior may provide the new application with the new function circuits.
Keywords :
hafnium compounds; random-access storage; resistors; switching circuits; HfO2; RRAM; SET process; pulse voltage dependent resistive switching; resistive random access memory; Process control; Resistance; Resistors; Switches; Tin; Voltage control;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667580
