A low-cost memristor based on titanium oxide

Memristor has been extensively investigated as the fourth fundamental circuit element. A common material in fabricating memristors is titanium oxide. The growth of titanium oxide has so far been focused on atomic layer deposition or sputtering, which is expensive. In this paper, a low-cost memristor device is demonstrated based on titanium oxide, grown by the thermal oxidation of deposited Ti film with a low-temperature process. Both the high and low resistance states of the device can be continually modulated by the successive voltage sweeps. Moreover, multilevel storage can be achieved in the device by using various maximum voltages during the set process.