DocumentCode
1635183
Title
Novel power bipolar devices
Author
Silard, Andrei P.
Author_Institution
Dept. of Electron., Polytech. Inst., Bucharest, Romania
fYear
1991
Firstpage
49
Abstract
The main structures and the performance/behavioral peculiarities of several novel power bipolar devices are presented. The developmental opportunities offered by these power switching devices are outlined
Keywords
bipolar transistors; power transistors; thyristors; GTO thyristors; TIL GATT; bipolar transistors; power bipolar devices; power switching devices; Anodes; Cathodes; Legged locomotion; Out of order; Power electronics; Power semiconductor switches; Technological innovation; Thyristors; Trade agreements; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrotechnical Conference, 1991. Proceedings., 6th Mediterranean
Conference_Location
LJubljana
Print_ISBN
0-87942-655-1
Type
conf
DOI
10.1109/MELCON.1991.161776
Filename
161776
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