125 GHz CMOS oscillator controlled by p-type bulk voltage

Author

Ono, Naoko ; Motoyoshi, Mizuki ; Katayama, Kousuke ; Fujishima, Minoru

Author_Institution

R&D Dept. 1, Semicond. Technol. Acad. Res. Center (STARC), Tokyo, Japan

fYear

2012

Firstpage

215

Lastpage

218

Abstract

We present a 125 GHz voltage-controlled oscillator (VCO) with a 3.4% tuning range based on a 65 nm CMOS process. The oscillator is tuned by utilizing the capacitance variation in NMOSFETs which is controlled by using the p-type bulk voltage of the NMOSFETs. The VCO has a simple structure to achieve a small internal loss. The VCO has an oscillation frequency of 124.9 GHz, an output power of -1.6 dBm and a power consumption of 17.0 mW at a drain voltage of 1.0 V and a bulk voltage of 0 V. The tuning range is from 122.0 GHz to 126.3 GHz.

Keywords

CMOS integrated circuits; MOSFET; capacitance; circuit tuning; field effect MIMIC; low-power electronics; millimetre wave oscillators; voltage-controlled oscillators; CMOS oscillator tuning; CMOS process; NMOSFET; VCO; capacitance variation; drain voltage; frequency 122.0 GHz to 126.3 GHz; oscillation frequency; p-type bulk voltage; power 17.0 mW; power consumption; size 65 nm; tuning range; voltage 1.0 V; voltage-controlled oscillator; CMOS integrated circuits; Frequency measurement; MOSFETs; Tuning; Voltage measurement; Voltage-controlled oscillators; 65 nm; CMOS; D-band; MOSFET; VCO; oscillator;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Symposium (RWS), 2012 IEEE

Conference_Location

Santa Clara, CA

ISSN

2164-2958

Print_ISBN

978-1-4577-1153-4

Type

conf

DOI

10.1109/RWS.2012.6175387

Filename

6175387