Novel polymer resistive memory based on parylene with high compatibility and scalability

A novel polymer (organic) resistive memory device with the structure of W/parylene+Au/Al is presented in this paper. The organic memory device exhibits not only high scalability but also good compatibility with CMOS back-end process, for parylene is immune to the lithographic solvents. Moreover, parylene film could be fabricated by chemical vapor deposition (CVD) instead of spin-coating, thus the quality and uniformity of the film can be improved. The device exhibits good nonvolatile memory characteristics, including low operating voltage (1.5 V / -3 V) and good retention capability (29000 s). A possible switching mechanism is also proposed and supported by the experimental data. The device shows great potentials for flexible, stackable and high-density memory applications.