• DocumentCode
    1635589
  • Title

    Scaled silicon nanoelectromechanical (NEM) hybrid systems

  • Author

    Mizuta, Hiroshi ; Garcia-Ramirez, Mario A. ; Hassani, Faezeh A. ; Ghiass, Mohammad A. ; Kalhor, Nima ; Moktadir, Zakaria ; Tsuchiya, Yoshishige ; Sawai, Shunichiro ; Ogi, Jun ; Oda, Shunri

  • Author_Institution
    NANO Group, Univ. of Southampton, Southampton, UK
  • fYear
    2010
  • Firstpage
    1198
  • Lastpage
    1201
  • Abstract
    In this paper we overview recent attempts at co-integrating silicon nano-electro-mechanical systems (NEMS) with nanoelectronic devices aiming to add more functionalities to conventional electronic devices in `More-than-Moore´ domain and also explore novel operating principles in `Beyond CMOS´ domain.
  • Keywords
    CMOS integrated circuits; elemental semiconductors; nanoelectromechanical devices; nanoelectronics; silicon; CMOS domain; NEM hybrid system; more-than-Moore domain; nanoelectronic device; scaled silicon nanoelectromechanical system; silicon NEMS; Atomic layer deposition; CMOS integrated circuits; Logic gates; Nanoelectromechanical systems; Nanoscale devices; Phonons; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667601
  • Filename
    5667601